trudyniisiТруды НИИСИSRISA Proceedings2225-73493033-6422НИЦ «КУРЧАТОВСКИЙ ИНСТИТУТ» - НИИСИ10.25682/NIISI.2026.1.0005trudyniisi-136Research ArticleВЫЧИСЛИТЕЛЬНЫЕ СИСТЕМЫ И ИХ ЭЛЕМЕНТЫCOMPUTING SYSTEMS AND THEIR COMPONENTSМоделирование подвижности в тонких кремниевых GAA нанотранзисторахSimulation of Carrier Mobility in Silicon Gate-All-Around (GAA) NanotransistorsМасальскийН. В.MasalskyN. V.volkov@niisi.ras.ruНИЦ «Курчатовский институт» – НИИСИ, МоскваRussian Federation202616052026161SRISA PROCEEDINGS3136Copyright © Масальский Н.В., 20262026Масальский Н.В.Masalsky N.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.t-niisi.ru/jour/article/view/136

Обсуждается влияние механизмов рассеяния на подвижность носителей в рабочей области ультратонких кремниевых полевых GAA нанотранзисторов с цилиндрической геометрией. При помощи интегрирования инструментов численного моделирования и моделей механизмов рассеяния носителей численно исследовано комбинированное влияние механизмов на подвижность носителей. Статистическими методами получена оценка разброса подвижности в диапазоне диаметров канала нанотранзистора от 3 до 8 нм и температур от 200 до 400 К.

We studied the impact of scattering mechanisms on carrier mobility in the active region of ultrathin silicon gate-all-around (GAA) cylindrical nanotransistors. Using numerical simulation tools and carrier scattering models, we analyzed how these mechanisms affect carrier mobility. We applied statistical methods to estimate mobility variation across 3 to 8 nm channel diameters and 200 to 400 K temperatures

кремниевый gate-all-around (GAA) нанотранзисторподвижность носителейтемпературная вариативностьмоделированиеsilicon gate-all-around (GAA) nanotransistorcarrier mobilitytemperature variabilitysimulationReferencesInternational Technology Roadmap for Semiconductors (ITRS) Interconnect, 2020 Edition. [Online] Available: https://irds.ieee.org/editions/2020 (accessed on 25 November 2025).International Technology Roadmap for Semiconductors (ITRS) Interconnect, 2020 Edition. [Online] Available: https://irds.ieee.org/editions/2020 (accessed on 25 November 2025).D.K. Ferry, M.J. Gilbert, R. Akis. Some considerations on nanowires in nanoelectronics // “IEEE Trans. Electron Devices”, (2008), V. 55, 2820–2826.D.K. Ferry, M.J. Gilbert, R. Akis. Some considerations on nanowires in nanoelectronics // “IEEE Trans. Electron Devices”, (2008), V. 55, 2820–2826.J. Appenzeller, J. Knoch, M.T. Bjork, H. Riel, H. Schmid, W. Riess. Toward nanowire electronics // “IEEE Trans. Electron Device”, (2008), V. 55, 2827–2845.J. Appenzeller, J. Knoch, M.T. Bjork, H. Riel, H. Schmid, W. Riess. Toward nanowire electronics // “IEEE Trans. Electron Device”, (2008), V. 55, 2827–2845.B. Yu, L. Wang, Y. Yuan, P.M. Asbeck, Y. Taur. Scaling of nanowire transistors // “IEEE Trans. Electron Device”, (2008), V. 55, 2846–2858.B. Yu, L. Wang, Y. Yuan, P.M. Asbeck, Y. Taur. Scaling of nanowire transistors // “IEEE Trans. Electron Device”, (2008), V. 55, 2846–2858.W. Lu, P. Xie, C.M. Lieber. Nanowire transistor performance limits and applications // “IEEE Trans. Electron Device”, (2008), V. 55, 2859–2876.W. Lu, P. Xie, C.M. Lieber. Nanowire transistor performance limits and applications // “IEEE Trans. Electron Device”, (2008), V. 55, 2859–2876.I.M. Tienda-Luna, F.G. Ruiz, A. Godoy, B. Biel, F. Gamiz. Surface roughness scattering model for arbitrarily oriented silicon nanowires // “J. Appl. Phys.”, (2011), V. 110, 084514.I.M. Tienda-Luna, F.G. Ruiz, A. Godoy, B. Biel, F. Gamiz. Surface roughness scattering model for arbitrarily oriented silicon nanowires // “J. Appl. Phys.”, (2011), V. 110, 084514.S. Jin, M.V. Fischetti, T.-W. Tang. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity // “J. Appl. Phys.”, (2007), V. 102, 083715.S. Jin, M.V. Fischetti, T.-W. Tang. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity // “J. Appl. Phys.”, (2007), V. 102, 083715.T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov. One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors// “In Proceedings of the Simulation of Semiconductor Processes and Devices”, (2016), Nuremberg, Germany, 5 October 2016, 23–26.T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov. One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors// “In Proceedings of the Simulation of Semiconductor Processes and Devices”, (2016), Nuremberg, Germany, 5 October 2016, 23–26.W. Zhang, C. Delerue, Y.-M. Niquet, G. Allan, E. Wang. Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires // “Phys. Rev. B”, (2010), V. 82, 115319.W. Zhang, C. Delerue, Y.-M. Niquet, G. Allan, E. Wang. Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires // “Phys. Rev. B”, (2010), V. 82, 115319.Y.-M. Niquet, C. Delerue, D. Rideau, B. Videau. Fully atomistic simulations of phonon-limited mobility of electrons and holes in 〈001〉-, 〈110〉-, and 〈111〉-oriented Si nanowires // “IEEE Trans. Electron Device”, (2012), V. 59, 1480–1487.Y.-M. Niquet, C. Delerue, D. Rideau, B. Videau. Fully atomistic simulations of phonon-limited mobility of electrons and holes in 〈001〉-, 〈110〉-, and 〈111〉-oriented Si nanowires // “IEEE Trans. Electron Device”, (2012), V. 59, 1480–1487.Y.-M. Niquet, C. Delerue, C. Krzeminski. Effects of strain on the carrier mobility in silicon nanowires // “Nano Lett.”, (2012), V. 12, 3545–3550.Y.-M. Niquet, C. Delerue, C. Krzeminski. Effects of strain on the carrier mobility in silicon nanowires // “Nano Lett.”, (2012), V. 12, 3545–3550.Н.В. Масальский. Моделирование ВАХ ультра тонких КНИ КМОП нанотранзисторов с полностью охватывающим затвором // “Микроэлектроника”, (2021), Т. 60, № 6, 387-393Н.В. Масальский. Моделирование ВАХ ультра тонких КНИ КМОП нанотранзисторов с полностью охватывающим затвором // “Микроэлектроника”, (2021), Т. 60, № 6, 387-393K. Huang. Statistical mechanics. New York, U.S.A.: John Wiely& Sons, 1987.K. Huang. Statistical mechanics. New York, U.S.A.: John Wiely& Sons, 1987.M. Kubo, N. Toda, N. Hashitsume. Statistical Physics II: Nonequilibrium Statistical Mechanics. Berlin, Germany: Springer, 1991.M. Kubo, N. Toda, N. Hashitsume. Statistical Physics II: Nonequilibrium Statistical Mechanics. Berlin, Germany: Springer, 1991.A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFETs: A 3-D atomistic simulation study // “IEEE Trans. Electron Device”, (1998), V. 45, 2505–2513.A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFETs: A 3-D atomistic simulation study // “IEEE Trans. Electron Device”, (1998), V. 45, 2505–2513.

The authors declare that there are no conflicts of interest present.