trudyniisiТруды НИИСИSRISA Proceedings2225-73493033-6422НИЦ «КУРЧАТОВСКИЙ ИНСТИТУТ» - НИИСИ10.25682/NIISI.2026.1.0006trudyniisi-137Research ArticleВЫЧИСЛИТЕЛЬНЫЕ СИСТЕМЫ И ИХ ЭЛЕМЕНТЫCOMPUTING SYSTEMS AND THEIR COMPONENTSSimulation of Carrier Mobility in Silicon Gate-All-Around (GAA) NanotransistorsSimulation of Carrier Mobility in Silicon Gate-All-Around (GAA) NanotransistorsMasalskyN. V.MasalskyN. V.volkov@niisi.ras.ruScientific Research Institute for System Analysis of the National Research Centre Kurchatov Institute, MoscowScientific Research Institute for System Analysis of the National Research Centre Kurchatov Institute202616052026161SRISA PROCEEDINGS3741Copyright © Masalsky N.V., 20262026Masalsky N.V.Masalsky N.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.t-niisi.ru/jour/article/view/137

We studied the impact of scattering mechanisms on carrier mobility in the active region of ultrathin silicon gate-all-around (GAA) cylindrical nanotransistors. Using numerical simulation tools and carrier scattering models, we analyzed how these mechanisms affect carrier mobility. We applied statistical methods to estimate mobility variation across 3 to 8 nm channel diameters and 200 to 400 K temperatures.

We studied the impact of scattering mechanisms on carrier mobility in the active region of ultrathin silicon gate-all-around (GAA) cylindrical nanotransistors. Using numerical simulation tools and carrier scattering models, we analyzed how these mechanisms affect carrier mobility. We applied statistical methods to estimate mobility variation across 3 to 8 nm channel diameters and 200 to 400 K temperatures.

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The authors declare that there are no conflicts of interest present.