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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">trudyniisi</journal-id><journal-title-group><journal-title xml:lang="ru">Труды НИИСИ</journal-title><trans-title-group xml:lang="en"><trans-title>SRISA Proceedings</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2225-7349</issn><issn pub-type="epub">3033-6422</issn><publisher><publisher-name>НИЦ «КУРЧАТОВСКИЙ ИНСТИТУТ» - НИИСИ</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">trudyniisi-25</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МОДЕЛИРОВАНИЕ ФИЗИЧЕСКИХ ПРОЦЕССОВ В МИКРО- И НАНО- ЭЛЕКТРОНИКЕ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MODELING OF PHYSICAL PROCESSES IN MICRO- AND NANO- ELECTRONICS</subject></subj-group></article-categories><title-group><article-title>Теплопроводность тонких кремниевых эллиптических наноструктур</article-title><trans-title-group xml:lang="en"><trans-title>Thermal Conductivity of Thin Silicon Elliptical Nanostructures</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Масальский</surname><given-names>Н. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Masalsky</surname><given-names>N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Москва</p></bio><email xlink:type="simple">volkov@niisi.ras.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">ФГУ ФНЦ НИИСИ РАН<country>Россия</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>15</day><month>10</month><year>2025</year></pub-date><volume>12</volume><issue>4</issue><fpage>81</fpage><lpage>85</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Масальский Н.В., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Масальский Н.В.</copyright-holder><copyright-holder xml:lang="en">Masalsky N.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.t-niisi.ru/jour/article/view/25">https://www.t-niisi.ru/jour/article/view/25</self-uri><abstract><p>Обсуждается поведение аномальной теплопроводности кремниевых цилиндрических наноструктур с эллиптическим сечением в стационарных состояниях. При помощи численного моделирования показано, что аномальная теплопроводность связана с формой поперечного сечения. Чем меньше отношение меньшей полуоси эллипса к большей, тем выше теплопроводность эллиптических наноструктур. А также при повышении температуры вклад в аномальную теплопроводность из-за снижения числа Кнудсена превалирует над вкладом из-за снижения объемной теплопроводности. Поэтому, с ростом температуры наблюдается рост теплопроводности цилиндрических наноструктур с эллиптическим сечением. Полученные результаты демонстрируют аномальную природу теплопроводности тонких кремневых цилиндрических наноструктур с эллиптическим сечением, которая отличается от классических представлений о теплопроводности твердых тел. аннотации.</p></abstract><trans-abstract xml:lang="en"><p>The behavior of anomalous thermal conductivity of silicon cylindrical elliptical nanostructures with elliptical cross-section in stationary states is discussed. Numerical simulation has shown that the abnormal thermal conductivity is related to the shape of the cross-section. The smaller the ratio of the large semi-axis of the ellipse to the smaller one, the higher the thermal conductivity of elliptical nanostructures. And that with an increase in temperature, the contribution to abnormal thermal conductivity due to a decrease in the Knudsen number prevails over the contribution due to a decrease in volumetric thermal conductivity. Therefore, with an increase in temperature, the thermal conductivity of cylindrical nanostructures with an elliptical cross-section increases by 28% in the range from 200 to 400 K. The obtained results demonstrate the anomalous nature of the thermal conductivity of thin silicon cylindrical nanostructures with an elliptical cross-section, which distinguishes them from the classical ideas about the thermal conductivity of solids.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>теплопроводность</kwd><kwd>число Кнудсена</kwd><kwd>уравнение Максвелла-Каттанео-Вернотта</kwd><kwd>кремниевые наноструктуры</kwd></kwd-group><kwd-group xml:lang="en"><kwd>thermal conductivity</kwd><kwd>Knudsen number</kwd><kwd>Maxwell-Cattaneo-Vernott equation</kwd><kwd>silicon nanostructures</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">J.H. Davies. The physics of low dimensional semiconductors. New York, Plenum, 1998.</mixed-citation><mixed-citation xml:lang="en">J.H. Davies. The physics of low dimensional semiconductors. 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