trudyniisiТруды НИИСИSRISA Proceedings2225-73493033-6422НИЦ «КУРЧАТОВСКИЙ ИНСТИТУТ» - НИИСИtrudyniisi-34Research ArticleПРОЕКТИРОВАНИЕ И МОДЕЛИРОВАНИЕ СБИСDESIGN AND MODELING OF VLSIЧувствительность распределения потенциала конических GAA нанотронзисторов к вариациям топологических размеров рабочей областиSensitivity of the Potential Distribution of Conical GAA Nanotransistors to Variations in the Topological Dimensions of the Working AreaМасальскийН. В.MasalskyN.

Москва

volkov@niisi.ras.ruФГУ ФНЦ НИИСИ РАНРоссия2023161020251332329Copyright © Масальский Н.В., 20252025Масальский Н.В.Masalsky N.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.t-niisi.ru/jour/article/view/34

Количественно проанализированы источники вариации распределения потенциала в конических all-around gate (GAA) транзисторах с короткой и тонкой рабочей областью. Разработана математическая модель флуктуации распределения потенциала, включающая вариации топологических параметров рабочей области транзистора. Численного исследованы флуктуации характеристической длины. Определены коэффициенты чувствительности. Сформулированы критерии оценки изменения потенциала из-за разброса топологических параметров.

The sources of potential distribution variation in conical all-around gate (GAA) transistors with a short and thin working area are quantitatively analyzed. A mathematical model of the fluctuation of the potential distribution has been developed, including variations in the topological parameters of the transistor's working area. Fluctuations of the characteristic length are numerically investigated. The sensitivity coefficients are determined. Criteria for evaluating potential changes due to the spread of topological parameters are formulated. nanostructures with an elliptical cross-section, which distinguishes them from the classical ideas about the thermal conductivity of solids.

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The authors declare that there are no conflicts of interest present.