trudyniisiТруды НИИСИSRISA Proceedings2225-73493033-6422НИЦ «КУРЧАТОВСКИЙ ИНСТИТУТ» - НИИСИ10.25682/NIISI.2025.1.0004trudyniisi-5Research ArticleВЫЧИСЛИТЕЛЬНЫЕ СИСТЕМЫ И ИХ ЭЛЕМЕНТЫCOMPUTING SYSTEMS AND THEIR COMPONENTSТеплопроводность кремниевого полевого GАА нанотранзистора с учетом шероховатости границыThermal Conductivity of a Silicon GAA Field-Effect Nanotransistor, Taking into Account the Roughness of the BoundaryМасальскийH. B.MasalskyN. V.

Москва

volkov@niisi.rasНИЦ «Курчатовский институт» — НИИСИРоссия202529092025151МАТЕМАТИЧЕСКОЕ И КОМПЬЮТЕРНОЕ МОДЕЛИРОВАНИЕ СЛОЖНЫХ СИСТЕМ: ТЕОРЕТИЧЕСКИЕ И ПРИКЛАДНЫЕ АСПЕКТЫ2632Copyright © Масальский H.B., 20252025Масальский H.B.Masalsky N.V.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.t-niisi.ru/jour/article/view/5

Обсуждается тепловая модель для кремниевых полевых GAА нанотранзисторов с учетом тепловых воздействий, вызванных шероховатостью границы. Модель построена на основе метода теории возмущений, в котором учитывается влияние зависимости диаметра нанопроволоки и шероховатости поверхности на теплопроводность канала транзистора, а также влияние особенностей GAА нанотранзисторной структуры на рассеивание тепла. В данном случае для тепловой коррекции модели транзистора (идеализированной), для которой разработана апробированная математическая модель, следует добавить слабое возмущение через дополнительный "возмущающий" гамильтониан. Тогда различные физические величины, связанные с возмущенной системой, могут быть выражены как "поправки" к характеристикам исходной модели. Эти поправки в априори малы по сравнению с размером самих величин. Однако они 1) существенно изменяют характеристики исходной системы, 2) упрощают алгоритмы их вычисления. На основе модели обсуждается влияние параметров конструкции GAА нанотранзисторов на его тепловыделение. Разработанная модель может быть применена для проектирования схем на основе GAА нанотранзисторов с учетом тепловых факторов.

A thermal model for silicon field-effect GAA nanotransistors is discussed, taking into account the thermal effects caused by boundary roughness. The model is based on the perturbation theory method, which takes into account the effect of the dependence of the nanowire diameter and surface roughness on the thermal conductivity of the transistor channel, as well as the effect of the characteristics of the GAA nanotransistor structure on heat dissipation. In this case, for thermal correction of the (idealized) transistor model, for which a proven mathematical model has been developed, a weak perturbation should be added through an additional "perturbing" Hamiltonian. Then the various physical quantities associated with the perturbed system can be expressed as "corrections" to the characteristics of the original model. These corrections are a priori small compared to the size of the quantities themselves. However, they 1) significantly change the characteristics of the initial system, and 2) simplify the algorithms for their calculation. Based on the model, the influence of the nanotransistor chip design parameters on its heat dissipation is discussed. The developed model can be used to design circuits based on nanotransistor chips, taking into account thermal factors.

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The authors declare that there are no conflicts of interest present.