trudyniisiТруды НИИСИSRISA Proceedings2225-73493033-6422НИЦ «КУРЧАТОВСКИЙ ИНСТИТУТ» - НИИСИtrudyniisi-67Research ArticleПРОЕКТИРОВАНИЕ И МОДЕЛИРОВАНИЕ СБИСDESIGN AND MODELING OF VLSIВлияние зернистости металлического затвора кремниевых конических GAA нанотранзисторв на флуктуации порогового напряженияThe Influence of the Drain Size of the Metal Gate of Silicon Conical GAA Nanotransistors on the Fluctuations of the Threshold VoltageМасальскийН. В.MasalskyN.

Москва

volkov@niisi.rasФГУ ФНЦ НИИСИ РАНРоссия202321102025134111116Copyright © Масальский Н.В., 20252025Масальский Н.В.Masalsky N.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.t-niisi.ru/jour/article/view/67

Обсуждается влияние зернистости металлического затвора на флуктуацию порогового напряжения кремниевого полевого GAA нанотранзистора. На основе теоремы Пельгорма разработана методика достоверной оценки флуктуации порогового напряжения. В диапазоне длин затворов транзисторов от 11 до 25 нм и средних размеров зерен от 3 до 10 нм получены коэффициенты Пельгорма. Относительные погрешности между модельными значениями стандартного отклонения порогового напряжения и данными полученными из 3D моделирования практически в 95% случаев ниже 5%.

The influence of the grain size of a metal gate on the fluctuation of the threshold voltage of a silicon field GAA nanotransistor is discussed. Based on Pelgor's theorem, a method of reliable estimation of threshold voltage fluctuations has been developed. Pelgorm coefficients were obtained in the range of transistor gate lengths from 11 to 25 nm and average grain sizes from 3 to 10 nm. The relative errors between the model values of the standard deviation of the threshold voltage and the data obtained from 3D modeling are in almost 95% of cases below 5%.

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The authors declare that there are no conflicts of interest present.