Sensitivity of the Potential Distribution of Conical GAA Nanotransistors to Variations in the Topological Dimensions of the Working Area
Abstract
The sources of potential distribution variation in conical all-around gate (GAA) transistors with a short and thin working area are quantitatively analyzed. A mathematical model of the fluctuation of the potential distribution has been developed, including variations in the topological parameters of the transistor's working area. Fluctuations of the characteristic length are numerically investigated. The sensitivity coefficients are determined. Criteria for evaluating potential changes due to the spread of topological parameters are formulated. nanostructures with an elliptical cross-section, which distinguishes them from the classical ideas about the thermal conductivity of solids.
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Review
For citations:
Masalsky N. Sensitivity of the Potential Distribution of Conical GAA Nanotransistors to Variations in the Topological Dimensions of the Working Area. SRISA Proceedings. 2023;13(3):23-29. (In Russ.)
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