Application of Lambert Function to Modeling the BAX GAA Nanotransistors
Abstract
The possibility of using a special Lambert function to simulate the volt-ampere characteristics of silicon field-effect transistors is investigated. An analytical model of a silicon field-effect GAA nanotransistor with a cylindrical geometry of the working area has been developed. At the same time, in the transistor model formulated within the framework of charge separation, the integral expression for the transistor current is replaced by an analytical one using the Lambert function. The calculation results are compared with the simulation results obtained using a widely used software and technology modeling environment. The final formulation of the model is characterized by the following advantages: it is analytical, adequate and compact. High accuracy is achieved with minimal computational cost. This makes it possible to use the considered approach in design tools and the search for an initial approximation for three-dimensional applied technological modeling.
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Review
For citations:
Masalsky N. Application of Lambert Function to Modeling the BAX GAA Nanotransistors. SRISA Proceedings. 2024;14(4):41-46. (In Russ.)
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