The Effect of Random Fluctuations of a Doping Impurity on the Characteristics of Field-Effect Silicon GAA Nanotransistors

Abstract

The effects of random fluctuations of an alloying impurity on the electrophysical characteristics of silicon field GAA nanotransistors with different radii of the working area are investigated. It is shown that transients with a smaller radius are characterized by a decrease in the average value and variation of the subthreshold slope and the DIBL effect, thereby increasing resistance to short-channel effects. On the contrary, the relative variations of the transistor drain current increase with decreasing diameter, which is associated with a decrease in the conductivity of the working area with narrower cross-sections. The absolute fluctuations of the flow current depend significantly on the amount of impurity penetrating into the working area. To determine the causes of fluctuations in the flow currents of silicon field GAA nanotransistors, statistical characteristics of the source/drain series resistance and low field mobility were studied. These parameters critically affect the current spread of the transistor drain at the same time. To offset the influence of the diffusion mechanism of the alloying impurity into the working area, it is recommended to limit the level of doping of the drain/source areas and use relatively large cross-sections of the working area from the range of possible ones. This will ensure stable electro-physical characteristics of transistors with high parry of shortchannel effects.