Thermal Conductivity of a Silicon GAA Field-Effect Nanotransistor, Taking into Account the Roughness of the Boundary
https://doi.org/10.25682/NIISI.2025.1.0004
Abstract
A thermal model for silicon field-effect GAA nanotransistors is discussed, taking into account the thermal effects caused by boundary roughness. The model is based on the perturbation theory method, which takes into account the effect of the dependence of the nanowire diameter and surface roughness on the thermal conductivity of the transistor channel, as well as the effect of the characteristics of the GAA nanotransistor structure on heat dissipation. In this case, for thermal correction of the (idealized) transistor model, for which a proven mathematical model has been developed, a weak perturbation should be added through an additional "perturbing" Hamiltonian. Then the various physical quantities associated with the perturbed system can be expressed as "corrections" to the characteristics of the original model. These corrections are a priori small compared to the size of the quantities themselves. However, they 1) significantly change the characteristics of the initial system, and 2) simplify the algorithms for their calculation. Based on the model, the influence of the nanotransistor chip design parameters on its heat dissipation is discussed. The developed model can be used to design circuits based on nanotransistor chips, taking into account thermal factors.
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Review
For citations:
Masalsky N.V. Thermal Conductivity of a Silicon GAA Field-Effect Nanotransistor, Taking into Account the Roughness of the Boundary. SRISA Proceedings. 2025;15(1):26-32. (In Russ.) https://doi.org/10.25682/NIISI.2025.1.0004
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