For citations:
Masalsky N.V. Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors. SRISA Proceedings. 2026;16(1):31-36. (In Russ.) https://doi.org/10.25682/NIISI.2026.1.0005
JATS XML
Masalsky N.V. Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors. SRISA Proceedings. 2026;16(1):31-36. (In Russ.) https://doi.org/10.25682/NIISI.2026.1.0005