Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors
https://doi.org/10.25682/NIISI.2026.1.0006
Аннотация
We studied the impact of scattering mechanisms on carrier mobility in the active region of ultrathin silicon gate-all-around (GAA) cylindrical nanotransistors. Using numerical simulation tools and carrier scattering models, we analyzed how these mechanisms affect carrier mobility. We applied statistical methods to estimate mobility variation across 3 to 8 nm channel diameters and 200 to 400 K temperatures.
Об авторе
N. V. Masalsky
Scientific Research Institute for System Analysis of the National Research Centre Kurchatov Institute, Moscow
Россия
Россия
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Рецензия
Для цитирования:
Masalsky N.V. Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors. Труды НИИСИ. 2026;16(1):37-41. https://doi.org/10.25682/NIISI.2026.1.0006
For citation:
Masalsky N.V. Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors. SRISA Proceedings. 2026;16(1):37-41. https://doi.org/10.25682/NIISI.2026.1.0006
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