Для цитирования:

Masalsky N.V. Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors. Труды НИИСИ. 2026;16(1):37-41. https://doi.org/10.25682/NIISI.2026.1.0006

For citation:

Masalsky N.V. Simulation of Carrier Mobility in Silicon Gate-All-Around (GAA) Nanotransistors. SRISA Proceedings. 2026;16(1):37-41. https://doi.org/10.25682/NIISI.2026.1.0006