For citations:
Masalsky N. The Influence of the Drain Size of the Metal Gate of Silicon Conical GAA Nanotransistors on the Fluctuations of the Threshold Voltage. SRISA Proceedings. 2023;13(4):111-116. (In Russ.)
Masalsky N. The Influence of the Drain Size of the Metal Gate of Silicon Conical GAA Nanotransistors on the Fluctuations of the Threshold Voltage. SRISA Proceedings. 2023;13(4):111-116. (In Russ.)